PART |
Description |
Maker |
STW9B12C |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
STW7C2SA |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA181001F |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTFA142401EL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTFA260851E PTFA260851F |
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz
|
Infineon Technologies AG
|
PTFA240451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
|
Infineon Technologies AG
|
PTVA030121EA |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 ?450 MHz
|
Cree, Inc
|
PTFA181001GL PTFA181001HL |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|